Indium Phosphide (InP) and Galium Arsenide (GaAs)

The InP/GaAs technology platform offers light amplification and detection, next to passive light manipulation as filtering, splitting or interfering. In the past 20 years, this technology has been widely used by chip manufacturers to make lasers, modulators and detectors, usually based on one epitaxial growth step. In the last five years, manufacturing technology has evolved to allow for a second or even a third epitaxial growth layer that allows for lower losses, more advanced passive components and electro-optical phase shifters.

Silicon Photonics

Silicon (Si) Photonic Integration Platform

The Silicon Photonics technology platform offers passive light manipulation at a very small footprint, allowed by the relative high contrast index of silicon. Such small chip size, its cheaper base material and its CMOS fabrication compatibility also results in a lower chip price. However, no light amplification is possible at the time, meaning that integration with other technologies will be required for some active functionalities. The main materials for this platform are:

Silicon-On-Insulator (SOI)
Silicon Dioxide (SiO₂)
Silicon Nitride (Si₃Ni₄)

VLC Photonics has the know-how to design and manufacture custom ASPICs in any of these material platforms.

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